Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve . IRF MOSFET N-CH 75V A TOAB International Rectifier datasheet pdf data sheet FREE from Datasheet (data sheet) search for. Charactiristics IRF MOSFET transistor. Type: n-channel; Drain-to-Source Breakdown Voltage: 75 V; Gate-to-Source Voltage, max: ±20 V; Drain-Source.

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